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July 2001
AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
VDS (V) = 30V ID = 6.4A RDS(ON) < 24m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) RDS(ON) < 40m (VGS = 2.5V) RDS(ON) < 70m (VGS = 1.8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1
D1
D2
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 12 Continuous Drain TA=25C 6.4 A Current TA=70C 5.4 ID Pulsed Drain Current B TA=25C A Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C IDM PD TJ, TSTG 30 1.5 1.08 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 64 89 53
Max 83 120 70
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8800
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.4A TJ=125C RDS(ON) VGS=4.5V, ID=6A VGS=2.5V, ID=5A VGS=1.8V, ID=2.5A VDS=5V, ID=5A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance 0.6 30 0.8 20 28 23 32 51 17 0.66 Min 30 1 5 100 1 24 36 30 40 70 1 2.4 Typ Max Units V A nA V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
10
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
767 111 82 1.3 10 1.2 3.1 5 5.5 39 4.7 15 7.1
VGS=4.5V, VDS=15V, ID=6.4A
VGS=10V, VDS=15V, RL=2.4, RGEN=6
IF=5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO8800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 2.5V 15 ID (A) 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 70 Normalized On-Resistance 60 RDS(ON) (m) 50 40 30 20 10 0 5 10 VGS=10V 0.8 15 20 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8V 1.8 1.6 1.4 1.2 1 VGS=10V 2V ID(A) 12 8 4 0 0 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1 3 125C 25C 10V 4.5V 16 20 VDS=5V
VGS=1.5V
VGS=4.5V
VGS=2.5V VGS=4.5V
VGS=2.5V VGS=1.8V
80 70 60 RDS(ON) (m) 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=5A IS (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha and Omega Semiconductor, Ltd.
AO8800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics VDS=15V ID=6.4A Capacitance (pF) 1400 1200 1000 800 600 400 Coss Ciss
Crss
100.0 TJ(Max)=150C TA=25C 1ms 10ms 1.0 1s 0.1s
40 TJ(Max)=150C TA=25C 30 Power (W)
10.0 ID (Amps)
RDS(ON) limited
100s
20
10 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSSOP-8 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
A A1 A2 b c D E E1 e L y
MIN --- 0.05 0.80 0.19 0.09 2.90 4.30 0.45 --- 0
NOM --- --- 1.00 --- --- 3.00 6.40 BSC 4.40 0.65 BSC 0.60 --- ---
MAX 1.20 0.15 1.05 0.30 0.20 3.10 4.50 0.75 0.10 8
MIN --- 0.002 0.031 0.007 0.004 0.114 0.169 0.018 --- 0
NOM --- --- 0.039 --- --- 0.118 0.252 BSC 0.173 0.0259 (REF) 0.024 --- ---
MAX 0.047 0.006 0.041 0.012 0.008 0.122 0.177 0.030 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LG PARTN F A W LN
- AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - WEEK CODE. - ASSEMBLY LOT CODE
TSSOP-8 PART NO. CODE
PART NO. AO8800 AO8701
CODE 8800 8701
PART NO.
CODE
PART NO.
CODE
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSSOP-8 Carrier Tape
TSSOP-8 Tape and Reel Data
TSSOP-8 Reel
TSSOP-8 Tape
Leader / Trailer & Orientation

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